Stacking effects in topological insulator Bi2Se3: a first-principles study

被引：1

作者：

Chen Yan-Li ^{[1
]}

Peng Xiang-Yang ^{[1
]}

Yang Hong ^{[1
,2
]}

Chang Sheng-Li ^{[3
]}

Zhang Kai-Wang ^{[1
]}

Zhong Jian-Xin ^{[1
]}

机构：

[1] Xiangtan Univ, Fac Mat Optoelect & Phys, Hunan Key Lab Micro Nano Energy Mat & Devices, Xiangtan 411105, Peoples R China

[2] Jishou Univ, Coll Phys Sci & Mech Engn, Jishou 416000, Peoples R China

[3] Natl Univ Def Technol, Coll Sci, Changsha 410073, Hunan, Peoples R China

来源：

ACTA PHYSICA SINICA | 2014年 / 63卷 / 18期

基金：

中国国家自然科学基金;

关键词：

topological insulator; topological phase; spin-orbit coupling; spin splitting; TOTAL-ENERGY CALCULATIONS; SINGLE DIRAC CONE; GAP;

D O I：

10.7498/aps.63.187303

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

By using first-principles method, we study the stacking effects on the electronic structure, topological phase and spin splitting in the bulk and film of topological insulator Bi2Se3. It is found that the different stackings can lead to different interlayer interactions and change the centrosymmetry of Bi2Se3. The centrosymmetric ABC and AAA stackings in bulk Bi2Se3 have similar band structures. ABA stacking breaks the centrosymmetry, giving rise to considerable changes of the band structure and large spin splitting. We further study the stacking effects in the film of Bi2Se3 and find that the non-centrosymmetric ABA stacking can induce large spin splitting in Bi2Se3 film. It is proposed and illustrated that the strain can tune the spin splitting effectively.

引用

页数：7

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