LiCoO2 thin-film cathodes grown by RF sputtering

被引:26
作者
Pracharová, J
Pridal, J
Bludská, J
Jakubec, I
Vorlícek, V
Málková, Z
Makris, TD
Giorgi, R
Jastrabík, L
机构
[1] Acad Sci Czech Republ, Inst Phys, Prague 18000 8, Czech Republic
[2] Inst Inorgan Chem, Rez 25068, Czech Republic
[3] ENEA, CR Casaccia New Mat Div, I-00100 Rome, Italy
关键词
LiCoO2; thin-film cathodes; Li-ion batteries;
D O I
10.1016/S0378-7753(02)00018-6
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
LiCoO2 thin-films have been grown by RF magnetron sputtering on silicon substrates covered with gold. As-grown films deposited at substrate temperature 500 degreesC were identified by XRD and RS as an HT hexagonal phase. The structure of the films prepared at substrate temperatures <300 degreesC were less well defined. Nevertheless, the films prepared at 200 degreesC have better electrochemical proper-ties than the films prepared at higher temperatures. The determination of the composition of thin-films showed that the composition approaches to the stoichiometric one for discharge power of 60 W irrespective of substrate temperature. In other cases, a slight excess of Li was found. The films have promising properties to be used as cathodes in lithium-ion (Li-ion) batteries. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:204 / 212
页数:9
相关论文
共 8 条
[1]   RECHARGEABLE THIN-FILM LITHIUM BATTERIES [J].
BATES, JB ;
GRUZALSKI, GR ;
DUDNEY, NJ ;
LUCK, CF ;
YU, XH .
SOLID STATE IONICS, 1994, 70 :619-628
[2]   2/3 A-SIZE RECHARGEABLE BATTERY EMPLOYING LICOO2 THIN-FILM CATHODE [J].
CHANG, HSW ;
LEE, TJ ;
LIN, SC ;
JENG, JH .
JOURNAL OF POWER SOURCES, 1995, 54 (02) :403-405
[3]  
da Fonseca CNP, 1999, J POWER SOURCES, V81, P575, DOI 10.1016/S0378-7753(99)00107-X
[4]  
HADJIEV VG, 1998, J PHYS C SOLID STATE, V21, pL119
[5]  
Inaba M, 1997, J RAMAN SPECTROSC, V28, P613, DOI 10.1002/(SICI)1097-4555(199708)28:8<613::AID-JRS138>3.0.CO
[6]  
2-T
[7]   A THIN-FILM SOLID-STATE MICROBATTERY [J].
JONES, SD ;
AKRIDGE, JR .
SOLID STATE IONICS, 1992, 53 (pt 1) :628-634
[8]  
LEE JK, 2000, P 197 EL M TOR