Acceptor-Compensated Charge Transport and Surface Chemical Reactions in Au-Implanted SnO2 Nanowires

被引：30

作者：

Katoch, Akash ^{[1
]}

Sun, Gun-Joo ^{[1
]}

Choi, Sun-Woo ^{[1
]}

Hishita, Shunichi ^{[2
]}

Kulish, Vadym V. ^{[3
]}

Wu, Ping ^{[3
]}

Kim, Sang Sub ^{[1
]}

机构：

[1] Inha Univ, Dept Mat Sci & Engn, Inchon 402751, South Korea

[2] Natl Inst Mat Sci, Tsukuba, Ibaraki 3050044, Japan

[3] Singapore Univ Technol & Design, Entrop Interface Grp, Singapore 138682, Singapore

来源：

SCIENTIFIC REPORTS | 2014年 / 4卷

基金：

新加坡国家研究基金会;

关键词：

DENSITY-FUNCTIONAL THEORY; PERFORMANCE; DEFECTS;

D O I：

10.1038/srep04622

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

A new deep acceptor state is identified by density functional theory calculations, and physically activated by an Au ion implantation technique to overcome the high energy barriers. And an acceptor-compensated charge transport mechanism that controls the chemical sensing performance of Au-implanted SnO2 nanowires is established. Subsequently, an equation of electrical resistance is set up as a function of the thermal vibrations, structural defects (Au implantation), surface chemistry (1 ppm NO2), and solute concentration. We show that the electrical resistivity is affected predominantly not by the thermal vibrations, structural defects, or solid solution, but the surface chemistry, which is the source of the improved chemical sensing. The response and recovery time of chemical sensing is respectively interpreted from the transport behaviors of major and minor semiconductor carriers. This acceptor-compensated charge transport mechanism provides novel insights not only for sensor development but also for research in charge and chemical dynamics of nano-semiconductors.

引用

页数：8

共 26 条

[1] α-MoO3/TiO2 core/shell nanorods: Controlled-synthesis and low-temperature gas sensing properties [J].

Chen, Yu-Jin ;

Xiao, Gang ;

Wang, Tie-Shi ;

Zhang, Fan ;

Ma, Yang ;

Gao, Peng ;

Zhu, Chun-Ling ;

Zhang, Endi ;

Xu, Zhi ;

Li, Qiu-hong .

SENSORS AND ACTUATORS B-CHEMICAL, 2011, 155 (01) :270-277

[2] NO2-sensing performance of SnO2 microrods by functionalization of Ag nanoparticles [J].

Choi, Sun-Woo ;

Katoch, Akash ;

Sun, Gun-Joo ;

Wu, Ping ;

Kim, Sang Sub .

JOURNAL OF MATERIALS CHEMISTRY C, 2013, 1 (16) :2834-2841

[3] Functionalization of selectively grown networked SnO2 nanowires with Pd nanodots by γ-ray radiolysis [J].

Choi, Sun-Woo ;

Jung, Sung-Hyun ;

Kim, Sang Sub .

NANOTECHNOLOGY, 2011, 22 (22)

[4]

Fink D. G., 1982, ELECT ENG HDB

[5] Focused gold ions beam for localized epitaxy of semiconductor nanowires [J].

Gierak, J. ;

Madouri, A. ;

Bourhis, E. ;

Travers, L. ;

Lucot, D. ;

Harmand, J. C. .

MICROELECTRONIC ENGINEERING, 2010, 87 (5-8) :1386-1390

[6] Energetic and Electronic Structure Analysis of Intrinsic Defects in SnO2 [J].

Godinho, Kate G. ;

Walsh, Aron ;

Watson, Graeme W. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2009, 113 (01) :439-448

[7] Influences of Al, Pd and Pt additives on the conduction mechanism as well as the surface and bulk properties of SnO2 based polycrystalline thick film gas sensors [J].

Huebner, M. ;

Barsan, N. ;

Weimar, U. .

SENSORS AND ACTUATORS B-CHEMICAL, 2012, 171 :172-180

[8] An Au clusters related spill-over sensitization mechanism in SnO2-based gas sensors identified by operando HERFD-XAS, work function changes, DC resistance and catalytic conversion studies [J].

Huebner, Michael ;

Koziej, Dorota ;

Grunwaldt, Jan-Dierk ;

Weimar, Udo ;

Barsan, Nicolae .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2012, 14 (38) :13249-13254

[9] Origins of coexistence of conductivity and transparency in SnO2 -: art. no. 095501 [J].

Kiliç, Ç ;

Zunger, A .

PHYSICAL REVIEW LETTERS, 2002, 88 (09) :955011-955014

[10] The sensitivity of gas sensor based on single ZnO nanowire modulated by helium ion radiation [J].

Liao, L. ;

Lu, H. B. ;

Li, J. C. ;

Liu, C. ;

Fu, D. J. ;

Liu, Y. L. .

APPLIED PHYSICS LETTERS, 2007, 91 (17)

← 1 2 3 →