Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors

被引：48

作者：

Nenadovic, N ^{[1
]}

Mijalkoyic, S

Nanver, LK

Vandamme, LKJ

d'Alessandro, V

Schellevis, H

Slotboom, JW

机构：

[1] Delft Univ Technol, DIMES, Lab ECTM, NL-2600 GB Delft, Netherlands

[2] Delft Univ Technol, DIMES, Lab HiTeC, NL-2600 GB Delft, Netherlands

[3] Eindhoven Univ Technol, Dept Elect Engn, NL-5600 MB Eindhoven, Netherlands

[4] Univ Naples Federico II, Dept Elect & Telecommun Engn, I-80125 Naples, Italy

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 2004年 / 39卷 / 10期

关键词：

bipolar transistor; electrothermal modeling; self-heating; silicon-on-glass; thermal coupling; thermal impedance;

D O I：

10.1109/JSSC.2004.833766

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A measurement system comprised of an ultra-low-distortion function generator, lock-in amplifier, and semiconductor parameter analyzer is used for sensitive extraction of the small-signal thermal impedance network of bipolar devices and circuits. The extraction procedure is demonstrated through measurements on several silicon-on-glass NPN test structures. Behavioral modeling of the mutual thermal coupling obtained by fitting a multipole rational complex function to measured data is presented.

引用

页码：1764 / 1772

页数：9

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