The crystalline structure, conductivity and optical properties of Co-doped ZnO thin films

被引:36
作者
Benramache, Said [1 ,2 ]
Benhaoua, Boubaker [2 ]
Belahssen, Okba [1 ,3 ]
机构
[1] Univ Biskra, Dept Mat Sci, Fac Sci, Biskra 07000, Algeria
[2] Univ El Oued, Inst Technol, VTRS Lab, El Oued 39000, Algeria
[3] Univ Tebessa, Fac Technol, Dept Mech, Tebessa 12000, Algeria
来源
OPTIK | 2014年 / 125卷 / 19期
关键词
ZnO; Thin film; Semiconductor doping; Ultrasonic spray technique; ULTRASONIC SPRAY; SUBSTRATE-TEMPERATURE; NI; AL;
D O I
10.1016/j.ijleo.2014.07.055
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Transparent conductive Co-doped ZnO thin films were deposited by ultrasonic spray technique. Conditions of preparation have been optimized to get good quality. A set of cobalt (Co)-doped ZnO (between 0 and 3 wt%) thin films were grown on glass substrate at 350 degrees C. The thin films were annealed at 500 degrees C for improvement of the physical properties. Nano crystalline films with hexagonal wurtzite structure and a strong (002) preferred orientation were obtained. The maximum value of grain size G = 63.99 nm is attained with undoped ZnO film. The optical transmissions spectra showed that both the undoped and doped ZnO films have transparency within the visible wavelength region. The band gap energy decreased after doping from 3.367 to 3.319 eV when Co concentration increased from 0 to 2 wt% with slight increase of electrical conductivity of the films from 7.71 to 8.33 (Omega cm)(-1). The best estimated structure, optical and electrical results are achieved in Co-doped ZnO film with 2 wt%. (C) 2014 Elsevier GmbH. All rights reserved.
引用
收藏
页码:5864 / 5868
页数:5
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