Effect of Heating Rate on the Activation Energy for Crystallization of Amorphous Ge2Sb2Te5 Thin Film

被引：52

作者：

Choi, Yunjung ^{[1
]}

Jung, Minsu ^{[1
]}

Lee, Young-Kook ^{[1
]}

机构：

[1] Yonsei Univ, Dept Mat Sci & Engn, Seoul 120749, South Korea

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2009年 / 12卷 / 07期

关键词：

antimony compounds; chalcogenide glasses; crystallisation; electrical resistivity; germanium compounds; heat treatment; semiconductor thin films; NUCLEATION; GROWTH; TRANSITION; KINETICS; MEMORY;

D O I：

10.1149/1.3129137

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

The crystallization of the amorphous Ge2Sb2Te5 film was investigated by in situ electrical sheet resistance measurement. The crystallization start temperature increases logarithmically with heating rate and is equated. The effective activation energy E-A of the crystallization is 2.34 eV at slow heating rates below 40 degrees C/min and decreases to 0.49 eV at higher heating rates because of the reduced activation energies for both nucleation and growth of the crystalline face-centered cubic phase by overheating at high heating rates.

引用

页码：F17 / F19

页数：3

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