Alpha-elastic recoil detection analysis of the energy distribution of oxygen ions implanted into silicon with plasma immersion ion implantation

被引:9
作者
Barradas, NP
Maas, AJH
Mandl, S
Gunzel, R
机构
[1] UNIV SURREY,DEPT ELECT & ELECT ENGN,GUILDFORD GU2 5XH,SURREY,ENGLAND
[2] EINDHOVEN UNIV TECHNOL,DEPT APPL PHYS,NL-5600 MB EINDHOVEN,NETHERLANDS
[3] ROSSENDORF INC,RES CTR,INST ION BEAM PHYS & MAT RES,D-01314 DRESDEN,GERMANY
[4] UNIV LISBON,CTR FIS NUCL,P-1699 LISBON,PORTUGAL
关键词
D O I
10.1063/1.365203
中图分类号
O59 [应用物理学];
学科分类号
摘要
Plasma immersion ion implantation was used to implant oxygen ions into silicon with applied voltage pulses of -40 kV and 2.5 mu s length. Positive ions, O-2(+) and O+, with a continuous energy distribution between O and 40 keV were implanted. Between 3x10(4) and 3x10(5) pulses, corresponding to nominal doses from 2x10(16) to 2x10(17)/cm(2), were used. The resulting oxygen depth profiles were measured with elastic recoil detection analysis using 13.4 MeV alpha particles. Rutherford backscattering was used to determine possible co-implanted contaminants. The obtained depth profiles were simulated using a linear superposition of calculated single-energy profiles. The results obtained for the energy distribution of the incident ions are compared with calculations obtained from a theoretical model, and the agreement is very good. The incident flux is found to be composed of 34(5)% O-2(+) and 66(5)% O+ ions with an Fe contamination of similar to 0.5%. (C) 1997 American Institute of Physics.
引用
收藏
页码:6642 / 6650
页数:9
相关论文
共 35 条
[2]  
Bohm D., 1949, The Characteristics of Electrical Discharges in Magnetic Fields
[3]  
BROWN IG, 1989, PHYSICS TECHNOLOGY I
[4]   A 100 kV 10 a high-voltage pulse generator for plasma immersion ion implantation [J].
Brutscher, J .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (07) :2621-2625
[5]   DYNAMIC MONTE-CARLO SIMULATION OF COMPOSITIONAL CHANGE AND ATOMIC REDISTRIBUTION IN MULTICOMPONENT TARGETS UNDER ION-BOMBARDMENT [J].
CHAKAROV, IR ;
TODOROV, SS ;
KARPUZOV, DS .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1992, 69 (2-3) :193-199
[6]  
CHEUNG NW, 1993, MATER RES SOC SYMP P, V279, P297
[7]   Discharge from hot CaO. [J].
Child, CD .
PHYSICAL REVIEW, 1911, 32 (05) :0492-0511
[8]   PLASMA SOURCE ION-IMPLANTATION TECHNIQUE FOR SURFACE MODIFICATION OF MATERIALS [J].
CONRAD, JR ;
RADTKE, JL ;
DODD, RA ;
WORZALA, FJ ;
TRAN, NC .
JOURNAL OF APPLIED PHYSICS, 1987, 62 (11) :4591-4596
[9]  
DAVIES JA, 1995, HDB MODERN ION BEAM, P358
[10]   MODELING OF CHARGING EFFECTS IN PLASMA IMMERSION ION-IMPLANTATION [J].
EN, W ;
CHEUNG, NW .
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1995, 96 (1-2) :435-439