Open circuit voltage decay characteristics of 4H-SiC p-i-n diode with carbon implantation

被引：11
|
作者：
Tanaka, Atsushi [1 ]
Nakayama, Koji [1 ]
Asano, Katsunori [1 ]
Miyazawa, Tetsuya [2 ]
Tsuchida, Hidekazu [2 ]
机构：
[1] Kansai Elect Power Co Inc, Power Engn R&D Ctr, Amagasaki, Hyogo 6610974, Japan
[2] Cent Res Inst Elect Power Ind, Mat Sci Res Lab, Yokosuka, Kanagawa 2400196, Japan
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 2014年 / 53卷 / 04期
基金：
日本学术振兴会;
关键词：
LIFETIME TEMPERATURE-DEPENDENCE; CARRIER LIFETIME; PIN DIODES; 1 CM(2); KV; EPILAYERS; GROWTH; IGBT;
D O I：
10.7567/JJAP.53.04EP08
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The open circuit voltage decay (OCVD) characteristics of 4H-SiC p-i-n diodes fabricated with the carbon implantation process are investigated. The bulk carrier lifetime in the fabricated devices can be estimated using OCVD measurements. The carrier lifetime at a high injection level (T-HL) of the fabricated diode with carbon implantation is 10.5 mu s, which is extremely long as compared with that of a diode fabricated with the standard process (1.3 mu s). (C) 2014 The Japan Society of Applied Physics
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页数：4
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