Investigation of displacement damage to vertical-cavity surface-emitting red lasers due to 1 MeV electron radiation

被引：2

作者：

Chen, J. W. ^{[1
,2
]}

Li, Y. D. ^{[1
]}

Heini, M. ^{[1
]}

Liu, B. K. ^{[1
,2
]}

Lei, Q. Q. ^{[1
,2
]}

Guo, Q. ^{[1
]}

Wen, L. ^{[1
]}

Zhou, D. ^{[1
]}

Lu, W. ^{[1
]}

He, C. F. ^{[1
]}

Aierke, A. ^{[1
]}

机构：

[1] Chinese Acad Sci, Xinjiang Tech Inst Phys & Chem, Key Lab Funct Mat & Device Special Environm, 40-1 South Beijing Rd, Urumqi 830011, Peoples R China

[2] Univ Chinese Acad Sci, 19-A Yuquan Rd, Beijing 100049, Peoples R China

来源：

AIP ADVANCES | 2020年 / 10卷 / 11期

基金：

中国国家自然科学基金; 中国科学院西部之光基金;

关键词：

PROTON IRRADIATION; HARDNESS; VCSELS;

D O I：

10.1063/5.0029695

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The effects of displacement damage due to 1 MeV electron radiation on 680 nm and 850 nm vertical-cavity surface-emitting lasers (VCSELs) were experimentally investigated. The displacement damage dose was calculated using the MULASSIS tool, where it was found that radiation significantly affects the threshold current of VCSELs. The threshold current damage factor is 2.46 x 10(-18) cm(2)/e for 680 nm VCSELs and 1.48 x 10(-18) cm(2)/e for 850 nm VCSELs. In addition, the power intensity distribution and light output power degradation were characterized to evaluate the radiation hardness of VCSELs. An understanding of the performance degradation of VCSELs under electron exposure would be useful in optimizing their applications in hostile environments.

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页数：5

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