NASDAC - A new simulation tool for the electro-thermal analysis of bipolar devices: Application to multi-finger AlGaAs/GaAs HBT's

被引：0

作者：

Macchiaroli, M ^{[1
]}

d'Alessandro, V ^{[1
]}

Rinaldi, N ^{[1
]}

机构：

[1] Univ Naples Federico II, Dept Elect & Telecommun Engn, I-80125 Naples, Italy

来源：

2002 23RD INTERNATIONAL CONFERENCE ON MICROELECTRONICS, VOLS 1 AND 2, PROCEEDINGS | 2002年

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper a new simulation tool is presented, suitable to describe the electro-thermal behavior in multi-finger AlGaAs/GaAs devices. The program is based on a new analytical formulation to compute the device temperature distribution both for the steady-state and the transient case and incorporates an accurate electro-thermal physically-based model for the elementary transistor. The effect of the geometry of heat dissipating regions is accounted for. Thermal conductivity dependence on temperature and de-biasing effects across metallization layers are also included. Hence the simulator can be efficaciously used to enhance the thermal chip design, by means of illustrative comparisons between different structures.

引用

页码：455 / 458

页数：4

共 9 条

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