Cathodoluminescence and REBIC study of defects in tin oxide

被引:0
|
作者
Maestre, D [1 ]
Cremades, A [1 ]
Piqueras, J [1 ]
机构
[1] Univ Complutense Madrid, Dept Fis Mat, Fac Ciencias Fis, E-28040 Madrid, Spain
关键词
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Cathodoluminescence (CL) and remote electron beam induced current (REBIC) in the scanning electron microscope (SEM) has been used to investigate the electron recombination mechanisms in tin oxide. Sintered material prepared from high purity powder has been found to show a strong dependence of the CL emission on the thermal treatments applied during sample preparation. SEM images show the presence of nano and microcrystalline grains. The correlation of the grain size and morphology with the optical emission is analysed by CL microscopy and spectroscopy. The evolution of the luminescence bands with mechanical milling shows a complex evolution of the 1.94 eV and 2.58 eV emissions which is explained by formation and recovery of defects during milling. REBIC measurements and imaging are used to characterize the formation of a potential barrier at the grain boundaries.
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页码:433 / 436
页数:4
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