Terahertz Ellipsometry Using Electron-Beam Based Sources

被引:0
作者
Hofmann, T. [1 ]
Herzinger, C. M. [2 ]
Schade, U. [3 ]
Mross, M. [4 ]
Woollam, J. A. [2 ]
Schubert, M. [1 ]
机构
[1] Univ Nebraska Lincoln, Lincoln, NE 68583 USA
[2] JA Woollam Co, Lincoln, NE USA
[3] BESSY, D-12489 Berlin, Germany
[4] Vermont Photon Technol Co, Bellows Falls, VT USA
来源
PERFORMANCE AND RELIABILITY OF SEMICONDUCTOR DEVICES | 2009年 / 1108卷
关键词
SMITH-PURCELL RADIATION;
D O I
暂无
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The precise determination of materials' optical constants in the THz frequency domain is an important new challenge in basic research and is crucial for novel technological applications. Spectroscopic ellipsometry is known as a vital tool for the determination of the materials' dielectric function including its anisotropy. However, ellipsometric measurements at very long wavelengths are difficult due to the lack of reliable sources of sufficient intensity and brilliance. Here we report on our recent advances to use ellipsometry in combination with different electron beam based sources in order to in investigate condensed matter samples in the frequency range from 0.1 to 8 THz. We successfully employ terahertz radiation emitted from two different tunable desktop sources (Smith-Purcell-effect source and a backward wave oscillator) in a polarizer-sample-analyzer ellipsometer scheme. We discuss and present THz range physical material properties clue to bound and unbound charge resonances in semiconducting materials. This research will provide important understanding of optical properties for novel materials, inspire new designs, and accelerate development of optical Terahertz devices.
引用
收藏
页码:85 / +
页数:2
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