Photosensitivity of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors

被引：30

作者：

Lee, Keun Woo ^{[1
]}

Heo, Kon Yi ^{[1
]}

Kim, Hyun Jae ^{[1
]}

机构：

[1] Yonsei Univ, Sch Elect & Elect Engn, Seoul 120749, South Korea

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 10期

关键词：

carbon nanotubes; deep levels; gallium compounds; indium compounds; nanotube devices; photodetectors; semiconductor materials; semiconductor nanotubes; thin film transistors; zinc compounds;

D O I：

10.1063/1.3098406

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We studied the optical and electrical properties of solution-based indium gallium zinc oxide single-walled carbon nanotubes blend thin film transistors (SB-IGZO/SWNTs blend TFTs). When the SB-IGZO/SWNTs blend TFTs were illuminated at a wavelength of 660 nm, the off-state drain current slightly increased, while below 550 nm, it increased significantly. The SB-IGZO/SWNTs blend TFTs were incredibly sensitive, with deep-level defects at approximately 2.25 eV, near the midgap. We also presented the photosensitivity (signal-to-noise ratio) of these TFTs. Our results demonstrate that the SB-IGZO/SWNTs blend could be a good candidate for an ultraviolet photodetector.

引用

页数：3

共 14 条

[1]

Bhattacharya P., 1997, Semiconductor Optoelectronic Devices

[2] Pentacene-carbon nanotubes: Semiconducting assemblies for thin-film transistor applications [J].