Preparation and Electrical Characteristics of Bi4-xYbxTi3O12 Ceramics

被引：1

作者：

Huang, C. Q. ^{[1
]}

Liu, J. ^{[1
]}

Chen, M. ^{[1
]}

Mei, X. A. ^{[1
]}

机构：

[1] Hunan Inst Sci & Technol, Sch Phys & Elect, Yueyang, Peoples R China

来源：

TESTING AND EVALUATION OF INORGANIC MATERIALS IV | 2014年 / 591卷

关键词：

Ferroelectric; Film; Bismuth Titanate; Doping; THIN-FILMS; BISMUTH TITANATE; CAPACITORS; MEMORIES;

D O I：

10.4028/www.scientific.net/KEM.591.212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electrical properties of Yb-doped bismuth titanate, Bi4-xYbxTi3O12 (BYbT) ceramics prepared by a conventional electroceramic technique were investigated. XRD analyses revealed Bi-layered perovskite structure in all samples. SEM micrographs showed randomly oriented and plate-like morphology. For the samples with x=0.25 and 1.0 the current-voltage characteristics exhibited negative differential resistance behaviors and their P-V hysteresis loops were characterized by large leakage current, whereas for the samples with x=0.5 and 0.75 the current-voltage characteristics showed simple ohmic behaviors and their P-E hysteresis loops were the saturated and undistorted hysteresis loops. The remanent polarization (P-r) and coercive field (E-c) of the BYbT ceramic with x=0.75 were above 16 mu C/cm(2) and 75KV/cm, respectively.

引用

页码：212 / 215

页数：4

共 11 条

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