Magnetron Sputtered nc-Al/α-Al2O3 Nanocomposite Thin Films for Nonvolatile Memory Application

被引：9

作者：

Li, Yibin ^{[1
,2
]}

Zhang, Sam ^{[1
]}

Liu, Y. ^{[3
]}

Chen, T. P. ^{[3
]}

Sritharan, Thirumany ^{[4
]}

Xu, Cong ^{[4
]}

机构：

[1] Nanyang Technol Univ, Sch Mech & Aerosp Engn, Singapore 639798, Singapore

[2] Harbin Inst Technol, Sch Astronaut, Ctr Composite Mat, Harbin 150001, Peoples R China

[3] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore

[4] Nanyang Technol Univ, Sch Mat Sci & Engn, Singapore 639798, Singapore

来源：

JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY | 2009年 / 9卷 / 07期

关键词：

Magnetron Sputtering; nc-Al/alpha-Al2O3; Nonvolatile Memory; GATE OXIDE; AL2O3; DEPOSITION; SI(100); DEVICES;

D O I：

10.1166/jnn.2009.M19

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

In this paper, we developed nc-Al/a-Al2O3 nanocomposite thin films using magnetron sputtering. The nc-Al/a-Al2O3 films were sputtered on p-type Si substrates from pure Al target in gas mixture of Ar and O-2. X-ray photoelectron spectroscopy and high resolution transmission electron microscope studies confirm that the nanocrystalline Al are embedded in amorphous Al2O3 matrix thus nc-Al/a-Al2O3 nanocomposite forms. This nanocomposite thin film exhibits memory effect as a result of charge trapping.

引用

页码：4116 / 4120

页数：5

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