High Performance 1550 nm Quantum Dot Semiconductor Optical Amplifiers Operating at 25-100 °C

被引：0

作者：

Eyal, O. ^{[1
,2
]}

Willinger, A. ^{[1
,3
]}

Mikhelashvili, V. ^{[1
,2
]}

Banyoudeh, S. ^{[4
]}

Schnabel, F. ^{[4
]}

Sichkovsky, V. ^{[4
]}

Reithmaier, J. P. ^{[4
]}

Eisenstein, G. ^{[1
,2
]}

机构：

[1] Technion, Dept Elect Engn, IL-32000 Haifa, Israel

[2] Technion, Russell Berrier Nanotechnol Inst, IL-32000 Haifa, Israel

[3] Spectra Phys Tel Aviv, 120 Yigal Alon St, IL-67443 Tel Aviv, Israel

[4] Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt, Technol Phys, D-34132 Kassel, Germany

来源：

2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) | 2018年

基金：

以色列科学基金会;

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report static and dynamic properties of 1550 nm quantum dot semiconductor optical amplifiers operating at 25-100 degrees C. Amplification of a single and two 28 Gbit/s channels separated by 2 nm were demonstrated over the entire temperature range.

引用

页数：3

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