High Performance 1550 nm Quantum Dot Semiconductor Optical Amplifiers Operating at 25-100 °C

被引：0
|
作者：
Eyal, O. [1 ,2 ]
Willinger, A. [1 ,3 ]
Mikhelashvili, V. [1 ,2 ]
Banyoudeh, S. [4 ]
Schnabel, F. [4 ]
Sichkovsky, V. [4 ]
Reithmaier, J. P. [4 ]
Eisenstein, G. [1 ,2 ]
机构：
[1] Technion, Dept Elect Engn, IL-32000 Haifa, Israel
[2] Technion, Russell Berrier Nanotechnol Inst, IL-32000 Haifa, Israel
[3] Spectra Phys Tel Aviv, 120 Yigal Alon St, IL-67443 Tel Aviv, Israel
[4] Univ Kassel, CINSaT, Inst Nanostruct Technol & Analyt, Technol Phys, D-34132 Kassel, Germany
来源：
2018 OPTICAL FIBER COMMUNICATIONS CONFERENCE AND EXPOSITION (OFC) | 2018年
基金：
以色列科学基金会;
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report static and dynamic properties of 1550 nm quantum dot semiconductor optical amplifiers operating at 25-100 degrees C. Amplification of a single and two 28 Gbit/s channels separated by 2 nm were demonstrated over the entire temperature range.
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页数：3
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