Chalcogenides-based quantum dots: Optical investigation using first-principles calculations

被引:60
作者
Al-Douri, Y. [1 ,2 ]
Khachai, H. [3 ]
Khenata, R. [4 ,5 ]
机构
[1] Univ Malaysia Perlis, Inst Nano Elect Engn, Kangar 01000, Perlis, Malaysia
[2] Univ Djillali Liabes Sidi Bel Abbes, Fac Sci, Dept Phys, Sidi Bel Abbes 22000, Algeria
[3] Djilali Liabes Univ, Lab Etude Mat & Instrumentat Opt, Djilali 22000, Algeria
[4] Univ Mascara, Lab Phys Quant & Modelisat Math LPQ3M, Mascara 29000, Algeria
[5] King Saud Univ, Fac Sci, Dept Phys & Astron, Riyadh 11451, Saudi Arabia
关键词
Quantum dot; Chalcogenides; Optical properties; GENERALIZED GRADIENT APPROXIMATION; REFRACTIVE-INDEX; LEAD CHALCOGENIDES; AB-INITIO; SEMICONDUCTORS; PRESSURE; TEMPERATURE; DEPENDENCE; TELLURIDE; MATRIX;
D O I
10.1016/j.mssp.2015.05.016
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The full potential-linearized augmented plane wave (FP-LAPW) method is implemented in WIEN2K code to calculate the indirect energy gap (Gamma-X) using density functional theory (OFT). The Engel-Vosko generalized gradient approximation (EV-GGA) and modified Becke Johnson (mBJ) formalisms are used to optimize the corresponding potential for energetic transition and optical properties calculations of lead chalcogenides (PbS1-xTex) alloys as a function of quantum dot diameter and is used to test the validity of our model of quantum dot potential. The refractive index and optical dielectric constant are investigated to explore best applications for solar cells. (C) 2015 Elsevier Ltd. All rights reserved.
引用
收藏
页码:276 / 282
页数:7
相关论文
共 39 条
[21]   One-pot aqueous synthesis of germanium-doped cadmium sulfide quantum dots as fluorescent probes for cell imaging [J].
Luo, Jinmei ;
Bai, Haihua ;
Yang, Peihui ;
Cai, Jiye .
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2015, 34 :1-7
[22]   A RELATIONSHIP BETWEEN THE REFRACTIVE INDEX AND THE INFRA-RED THRESHOLD OF SENSITIVITY FOR PHOTOCONDUCTORS [J].
MOSS, TS .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON SECTION B, 1950, 63 (363) :167-176
[23]   SOLAR CONTROL CHARACTERISTICS OF CHEMICALLY DEPOSITED LEAD SULFIDE COATINGS [J].
NAIR, PK ;
OCAMPO, M ;
FERNANDEZ, A ;
NAIR, MTS .
SOLAR ENERGY MATERIALS, 1990, 20 (03) :235-243
[24]  
Nelson J., 2003, PHYS SOLAR CELLS, P175
[25]   WAVE-NUMBER-DEPENDENT DIELECTRIC FUNCTION OF SEMICONDUCTORS [J].
PENN, DR .
PHYSICAL REVIEW, 1962, 128 (05) :2093-+
[26]  
Perdew JP, 1996, PHYS REV LETT, V77, P3865, DOI 10.1103/PhysRevLett.77.3865
[27]   Calculated band structures and optical properties of lead chalcogenides PbX (X = S, Se, Te) under hydrostatic pressure [J].
Rached, D ;
Rabah, M ;
Benkhettou, N ;
Driz, M ;
Soudini, B .
PHYSICA B-CONDENSED MATTER, 2003, 337 (1-4) :394-403
[28]   PENN GAP IN SEMICONDUCTORS [J].
RAVINDRA, NM ;
AULUCK, S ;
SRIVASTAVA, VK .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1979, 93 (02) :K155-K160
[29]   TEMPERATURE AND PRESSURE DEPENDENCES OF THE DIELECTRIC-CONSTANTS OF SEMICONDUCTORS [J].
SAMARA, GA .
PHYSICAL REVIEW B, 1983, 27 (06) :3494-3505
[30]   LARGE-SIGNAL ANALYSIS OF A SILICON READ DIODE OSCILLATOR [J].
SCHARFETTER, DL ;
GUMMEL, HK .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (01) :64-+