Bonding and electronics of the silicene/MoTe2 interface under strain

被引:17
作者
Szary, Maciej J. [1 ]
机构
[1] Poznan Univ Tech, Inst Phys, PL-61138 Poznan, Poland
关键词
2D materials; Diachalcogenides; Silicene; Heterostructure; Strain; Electric contacts; BAND-GAP; TRANSITION; MONOLAYER; MO; PSEUDOPOTENTIALS; POLARIZATION; ADSORPTION; MOTE2;
D O I
10.1016/j.apsusc.2019.06.156
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Density functional theory calculations have been performed to investigate the structural and electronic properties of silicene/MoTe2 heterostructure under strain. The results show three different interaction cases depending on the interface configuration. The interactions can be weak and limited to van der Waals forces, or strong and covalent producing hybrid states between p(z)-p(z) and p(x)/p(y)-p(z) orbital pairs of Si and Te. Covalent bonding gives rise to well-defined, energetically favorable configurations with properties distinguishably different from those observed in vdW-only configurations. The new hybrid states shared between the layers allow for more effective charge transfer between them, which is critical for the performance of electronic and optoelectronic devices.
引用
收藏
页码:469 / 477
页数:9
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