Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination

被引：10

作者：

Gan, Zhaofeng ^{[1
]}

DiNezza, Michael ^{[2
]}

Zhang, Yong-Hang ^{[2
]}

Smith, David J. ^{[1
]}

McCartney, Martha R. ^{[1
]}

机构：

[1] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[2] Arizona State Univ, Sch Elect Comp & Energy Engn, Tempe, AZ 85287 USA

来源：

MICROSCOPY AND MICROANALYSIS | 2015年 / 21卷 / 06期

关键词：

electron holography; ZnTe; dynamic effects; mean inner potential; inelastic mean free path; THERMAL-DIFFUSION;

D O I：

10.1017/S1431927615015378

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The mean inner potential (MIP) and inelastic mean free path (IMFP) of undoped ZnTe are determined using a combination of off-axis electron holography and convergent beam electron diffraction. The ZnTe MIP is measured to be 13.7 +/- 0.6 V, agreeing with previously reported simulations, and the IMFP at 200 keV is determined to be 46 +/- 2 nm for a collection angle of 0.75 mrad. Dynamical effects affecting holographic phase imaging as a function of incident beam direction for several common semiconductors are systematically studied and compared using Bloch wave simulations. These simulation results emphasize the need for careful choice of specimen orientation when carrying out quantitative electron holography studies in order to avoid erroneous phase measurements.

引用

页码：1406 / 1412

页数：7

共 22 条

[1] HIGH-TEMPERATURE ELECTRICAL PROPERTIES OF ZNTE - A1 - SELF-COMPENSATION MODEL IN ZNTE [J].