Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs

被引：3

作者：

Kim, IH ^{[1
]}

机构：

[1] Chungju Natl Univ, Dept Mat Sci & Engn, Nano Technol Lab, Chungju 380702, Chungbuk, South Korea

来源：

MATERIALS LETTERS | 2002年 / 54卷 / 04期

关键词：

ohmic contact; compound semiconductor; solid phase regrowth; Pd/Ge; InGaAs;

D O I：

10.1016/S0167-577X(01)00586-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Pd/Ge/Pd/Ti/Au ohmic contact to n-type InGaAs was investigated with rapid thermal annealing conditions. Minimum specific contact resistivity of 1.1 x 10(-6) Omega cm(2) was achieved by rapid thermal annealing at 400 degreesC, and the ohmic performance was degraded at higher annealing temperature due to the reaction between ohmic materials and InGaAs substrate. However, non-spiking planar interface and relatively good ohmic contact (high-10(-6) Omegacm(2)) were maintained. This ohmic contact system is a promising candidate for compound semiconductor devices. (C) 2002 Elsevier Science B.V All rights reserved.

引用

页码：323 / 327

页数：5

共 9 条

[1] OHMIC CONTACT STUDY FOR QUANTUM EFFECT TRANSISTORS AND HETEROJUNCTION BIPOLAR-TRANSISTORS WITH INGAAS CONTACT LAYERS [J].

CHEN, WL ;

COWLES, JC ;

HADDAD, GI ;

MUNNS, GO ;

EISENBEISER, KW ;

EAST, JR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (06) :2354-2360

[2] PT/TI/GE/PD OHMIC CONTACTS TO GAAS - A STRUCTURAL, CHEMICAL, AND ELECTRICAL INVESTIGATION [J].

COLE, MW ;

HAN, WY ;

CASAS, LM ;

ECKART, DW ;

JONES, KA .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1994, 12 (04) :1904-1909

[3] On the low resistance Au/Ge/Pd ohmic contact to n-GaAs [J].

Hao, PH ;

Wang, LC ;

Deng, F ;

Lau, SS ;

Cheng, JY .

JOURNAL OF APPLIED PHYSICS, 1996, 79 (08) :4211-4215

[4] A study on Au/Ni/Au/Ge/Pd ohmic contact and its application to AlGaAs/GaAs heterojunction bipolar transistors [J].

Kim, IH ;

Park, SH ;

Lee, TW ;

Park, MP .

APPLIED PHYSICS LETTERS, 1997, 71 (13) :1854-1856

[5]

KIM IH, 1997, JPN J APPL PHYS, V37, P1854

[6] AI and ES research for DSS - Preface [J].

Lee, JK ;

Mizoguchi, R .

DECISION SUPPORT SYSTEMS, 1996, 18 (01) :1-1

[7]

MARSHALL ED, 1985, APPL PHYS LETT, V48, P535

[8] THERMALLY STABLE PD/GE OHMIC CONTACTS TO N-TYPE GAAS [J].

TSUCHIMOTO, J ;

SHIKATA, S ;

HAYASHI, H .

JOURNAL OF APPLIED PHYSICS, 1991, 69 (09) :6556-6563

[9] LOW-RESISTANCE NONSPIKING OHMIC CONTACT FOR ALGAAS GAAS HIGH ELECTRON-MOBILITY TRANSISTORS USING THE GE/PD SCHEME [J].

WANG, LC ;

LAU, SS ;

HSIEH, EK ;

VELEBIR, JR .

APPLIED PHYSICS LETTERS, 1989, 54 (26) :2677-2679

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