Interface chemistry of H2O on GaAs nanowires probed by near ambient pressure X-ray photoelectron spectroscopy

被引：11

作者：

Zhang, Xueqiang ^{[1
,2
]}

Lamere, Edward ^{[1
,3
]}

Liu, Xinyu ^{[3
]}

Furdyna, Jacek K. ^{[3
]}

Ptasinska, Sylwia ^{[1
,3
]}

机构：

[1] Univ Notre Dame, Radiat Lab, Notre Dame, IN 46556 USA

[2] Univ Notre Dame, Dept Chem & Biochem, Notre Dame, IN 46556 USA

[3] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

来源：

CHEMICAL PHYSICS LETTERS | 2014年 / 605卷

基金：

美国国家科学基金会; 美国能源部;

关键词：

MOLECULAR-BEAM EPITAXY; WATER; SURFACE; GROWTH; TEMPERATURE; ADSORPTION; OXIDES;

D O I：

10.1016/j.cplett.2014.05.007

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Interface chemistry of H2O on GaAs nanowires is investigated by in situ X-ray photoelectron spectroscopy (XPS) at elevated water vapor pressures (from UHV to 5 mbar) and temperatures (from room temperature to 400 degrees C). Surface-assisted water dissociation leads to oxidation and hydroxylation of surface Ga atoms. In comparison with the simple planar GaAs(1 0 0) crystal, the H2O dissociation process on GaAs nanowires is greatly enhanced at elevated pressures and temperatures. (C) 2014 Elsevier B.V. All rights reserved.

引用

页码：51 / 55

页数：5

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