Colour tunable co-evaporated CdSxSe1-x (0 ≤ x ≤ 1) ternary chalcogenide thin films for photodetector applications

被引：29
作者：
Moger, Sahana Nagappa [1 ]
Mahesha, M. G. [1 ]
机构：
[1] Manipal Acad Higher Educ, Manipal Inst Technol, Dept Phys, Manipal 576104, India
来源：
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2020年 / 120卷
关键词：
Ternary chalcogenides; Thin films; Photo-detectors; XPS; Band gap tunability; CHEMICAL BATH DEPOSITION; ELECTRICAL-PROPERTIES; SOLAR-CELLS; CDS; GROWTH; PERFORMANCE; NANOWIRES;
D O I：
10.1016/j.mssp.2020.105288
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Cadmium Sulfoselenide CdSxSe1-x (0 <= x <= 1) films were grown by thermal co-evaporation of source materials, CdS and CdSe, taken in the stoichiometric ratio. Systematic shift in the position of X-ray diffractogram (XRD) peak and optical absorption edge have confirmed the change in structural and optical properties as x varied from 0 to 1. Further, photoluminescence (PL) spectra revealed that ternary system has a minimum defect, which is the basic requirement for device applications. The Raman and X-ray photoelectron spectroscopy (XPS) studies have given concurrent results revealing the chemical states of the ternary samples. Detailed analysis of XPS has shown incorporation of oxygen in minor fraction, which proved to help in improving the photoresponse. Electrical study has shown that the electrical properties can varied by changing the composition. All the samples have exhibited n-type conductivity with carrier concentration in the range 10(14) to 10(15) cm(-3). Finally, photoresponse study showed that sample with x = 0.2 is best suitable for photodetector, where the device can be operated over entire visible range.
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页数：11
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