Frontier of transparent conductive oxide thin films

被引：157
作者：
Hosono, H [1 ]
Ohta, H
Orita, M
Ueda, K
Hirano, M
机构：
[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan
[2] Japan Sci & Technol Corp, ERATO, Transparent ElectroAct Mat Project, Takatsu Ku, Kawasaki, Kanagawa 2130012, Japan
来源：
VACUUM | 2002年 / 66卷 / 3-4期
关键词：
transparent oxide conductors; p-n junction; UV-LED; ITO; Ga2O3; CuInO2;
D O I：
10.1016/S0042-207X(02)00165-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The recent advancement of transparent conductive oxide thin films is reviewed using our strategy. Topics focused are the lowest resistive indium tin oxide films, deep-ultraviolet (deep-UV) transparent conductive oxides (TCO) thin film, p-n homo junction based on bipolar CuInO2, and UV-light emitting diode based on p-n hetero-junction. A frontier of transparent oxide semiconductors is opening as a consequence of discovery of p-type TCO. (C) 2002 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：419 / 425
页数：7
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