On the origin of contact resistances in graphene devices fabricated by optical lithography

被引：19

作者：

Chavarin, Carlos Alvarado ^{[1
,2
]}

Sagade, Abhay A. ^{[3
,4
]}

Neumaier, Daniel ^{[3
]}

Bacher, Gerd ^{[1
,2
]}

Mertin, Wolfgang ^{[1
,2
]}

机构：

[1] Univ Duisburg Essen, Werkstoffe Elektrotech, D-47057 Duisburg, Germany

[2] Univ Duisburg Essen, CENIDE, D-47057 Duisburg, Germany

[3] AMO GmbH, Adv Microelect Ctr Aachen AMICA, D-52074 Aachen, Germany

[4] Univ Cambridge, Dept Engn, Ctr Adv Photon & Elect, Cambridge CB3 0FA, England

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2016年 / 122卷 / 02期

关键词：

PERFORMANCE; TRANSISTORS;

D O I：

10.1007/s00339-015-9582-5

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The contact resistance is a key bottleneck limiting the performance of graphene-based electronic and optoelectronic devices. Using a combined approach of atomic force microscopy patterning, Kelvin probe force microscopy and micro-Raman mapping, we study the influence of optical lithography resists on the contact resistance in graphene devices. We find that devices fabricated by optical lithography show a significantly larger contact resistance compared to devices produced by electron beam lithography using polymethylmethacrylate as resist. This difference is attributed to a 3-4-nm-thick residual layer remaining in between the contact metal and the graphene after optical lithography.

引用

页码：1 / 5

页数：5

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