Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes

被引：10

作者：

Czuba, K. ^{[1
]}

Sankowska, I. ^{[1
]}

Jurenczyk, J. ^{[1
,2
]}

Jasik, A. ^{[1
]}

Papis-Polakowska, E. ^{[1
]}

Kaniewski, J. ^{[1
]}

机构：

[1] Inst Elect Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland

[2] VIGO Syst SA, Ul Poznanska 129-133, PL-05850 Ozarow Mazowiecki, Poland

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 05期

关键词：

InAs/GaSb; type-II superlattice; MWIR photodiode; dark current modelling; DETECTORS;

D O I：

10.1088/1361-6641/aa62c0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Doping of the absorption region is one of the most crucial aspects in the narrow-bandgap semiconductor design of a photodiode, especially if it is adjacent to the p-n junction area. It has a significant impact on various dark current mechanisms, and thus the overall performance of these devices. In this work, the influence of Be doping placement in the absorption region of type-II InAs/GaSb superlattice-based homojunction photodiodes on their performance was investigated. The analysis of diffusion, generation-recombination, shunt and the tunnelling components of the dark current was performed over a wide range of temperatures. Moreover, performance-limiting factors were considered as well as their impact on the most important figures of merit of the photodetectors. The photodiodes with Be-doped InAs layers in the absorption region achieved the best performance.

引用

页数：9

共 30 条

[21] A MODEL FOR THE TRAP-ASSISTED TUNNELING MECHANISM IN DIFFUSED N-P AND IMPLANTED N+-P HGCDTE PHOTODIODES
ROSENFELD, D
BAHIR, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (07) : 1638 - 1645
[22] Sah C.-T., 1991, Fundamentals of solid-state electronics
[23] CARRIER GENERATION AND RECOMBINATION IN P-N JUNCTIONS AND P-N JUNCTION CHARACTERISTICS
SAH, CT
NOYCE, RN
SHOCKLEY, W
[J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1957, 45 (09): : 1228 - 1243
[24] Non-periodicity of peak-to-peak distances in x-ray diffraction spectrums from perfect superlattices
Sankowska, I.
Domagala, J. Z.
Yefanov, O. M.
Jasik, A.
Kubacka-Traczyk, J.
Reginski, K.
Seeck, O. H.
[J]. JOURNAL OF APPLIED PHYSICS, 2013, 113 (06)
[25] In-plane and growth direction electron cyclotron effective mass in short period InAs/GaSb semiconductor superlattices
Suchalkin, S.
Belenky, G.
Svensson, S. P.
Laikhtman, B.
Smirnov, D.
Tung, L. C.
Bandara, S.
[J]. JOURNAL OF APPLIED PHYSICS, 2011, 110 (04)
[26] Sze S. M, 2006, Semiconductor Devices: Physics and Technology
[27] Vertical minority carrier electron transport in p-type InAs/GaSb type-II superlattices
Umana-Membreno, G. A.
Klein, B.
Kala, H.
Antoszewski, J.
Gautam, N.
Kutty, M. N.
Plis, E.
Krishna, S.
Faraone, L.
[J]. APPLIED PHYSICS LETTERS, 2012, 101 (25)
[28] Modeling of type-II InAs/GaSb superlattices using an empirical tight-binding method and interface engineering
Wei, YJ
Razeghi, M
[J]. PHYSICAL REVIEW B, 2004, 69 (08)
[29] Type IIInAs/GaSb superlattice photovoltaic detectors with cutoff wavelength approaching 32 μm
Wei, YJ
Gin, A
Razeghi, M
Brown, GJ
[J]. APPLIED PHYSICS LETTERS, 2002, 81 (19) : 3675 - 3677
[30] Zuo D Y, 2015, THESIS

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