Influence of Be doping placement in InAs/GaSb superlattice-based absorber on the performance of MWIR photodiodes

被引：10
作者：
Czuba, K. [1 ]
Sankowska, I. [1 ]
Jurenczyk, J. [1 ,2 ]
Jasik, A. [1 ]
Papis-Polakowska, E. [1 ]
Kaniewski, J. [1 ]
机构：
[1] Inst Elect Technol, Al Lotnikow 32-46, PL-02668 Warsaw, Poland
[2] VIGO Syst SA, Ul Poznanska 129-133, PL-05850 Ozarow Mazowiecki, Poland
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2017年 / 32卷 / 05期
关键词：
InAs/GaSb; type-II superlattice; MWIR photodiode; dark current modelling; DETECTORS;
D O I：
10.1088/1361-6641/aa62c0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Doping of the absorption region is one of the most crucial aspects in the narrow-bandgap semiconductor design of a photodiode, especially if it is adjacent to the p-n junction area. It has a significant impact on various dark current mechanisms, and thus the overall performance of these devices. In this work, the influence of Be doping placement in the absorption region of type-II InAs/GaSb superlattice-based homojunction photodiodes on their performance was investigated. The analysis of diffusion, generation-recombination, shunt and the tunnelling components of the dark current was performed over a wide range of temperatures. Moreover, performance-limiting factors were considered as well as their impact on the most important figures of merit of the photodetectors. The photodiodes with Be-doped InAs layers in the absorption region achieved the best performance.
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页数：9
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