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Electrically-tunable spin polarization in boron-doped armchair black phosphorene nanoribbon
被引:6
作者:

Zhang, Shidong
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Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China

Zhang, Xiaojiao
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Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
Hunan Univ Technol & Business, Sch Math & Stat, Dept Phys, Changsha 410205, Peoples R China Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China

Wang, Yun-Peng
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Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China

Zeng, Bowen
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Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China

Long, Mengqiu
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h-index: 0
机构:
Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
Xinjiang Univ, Sch Phys Sci & Technol, Inst Low Dimens Quantum Mat & Devices, Urumqi 830046, Peoples R China Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
机构:
[1] Cent South Univ, Sch Phys & Elect, Hunan Key Lab Super Microstruct & Ultrafast Proc, Changsha 410083, Peoples R China
[2] Hunan Univ Technol & Business, Sch Math & Stat, Dept Phys, Changsha 410205, Peoples R China
[3] Xinjiang Univ, Sch Phys Sci & Technol, Inst Low Dimens Quantum Mat & Devices, Urumqi 830046, Peoples R China
基金:
中国国家自然科学基金;
关键词:
First principle;
Phosphorene nanoribbon;
Electric field;
Impurity;
Magnetism;
TUNING MAGNETISM;
ELECTRONIC-PROPERTIES;
FIELD;
STRAIN;
SEMICONDUCTOR;
STATE;
D O I:
10.1016/j.jmmm.2020.167525
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
In two dimensional (2D) black phosphorene (BP), most of impurity atoms can introduce the highly local states near the Fermi level, but not necessarily bring spin polarization. The scientific community believes that one of the reasons may be that these impurity states are not partially filled by electrons. In this work, by first principle calculation, the coupling effects of the impurity atoms and the transverse electric field have been considered, our results indicate that the electric field can induce the spin polarization of the impurity states and convert the system from a semiconductor to a magnetic metal in the boron-doped armchair black phosphorene nanoribbons. Furthermore, the effect of electron doping has also been calculated, and we find that adding an extra electron to the system can also cause the spin splitting of the impurity subband and bring the transformation of the system from a semiconductor to a half metal and then to a magnetic semiconductor.
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页数:8
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