Switching Characterization of SiC MOSFETs in Three-Level Active Neutral-Point-Clamped Inverter Application

被引：3
作者：
Chen, Mengxing [1 ]
Pan, Donghua [1 ]
Wang, Huai [1 ]
Wang, Xiongfei [1 ]
Blaabjerg, Frede [1 ]
Wang, Wei [2 ]
机构：
[1] Aalborg Univ, Dept Energy Technol, Aalborg, Denmark
[2] Harbin Inst Technol, Sch Elect Engn & Automat, Harbin, Peoples R China
来源：
2019 10TH INTERNATIONAL CONFERENCE ON POWER ELECTRONICS AND ECCE ASIA (ICPE 2019 - ECCE ASIA) | 2019年
关键词：
ANPC inverter; parasitic inductance; SiC MOSFET; switching characterization; POWER; CONVERTER; MODEL;
D O I：
10.23919/icpe2019-ecceasia42246.2019.8796955
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The switching characterization of power devices is critical for improving the efficiency and reliability of power electronic converters. In this paper, the switching characteristics of silicon carbide (SiC) MOSFETs in a three-level active neutral-point-clamped (3L-ANPC) inverter are investigated. A parasitic model of the 3L-ANPC phase-leg is proposed first based on a design case and its ANSYS/Q3D simulation. Then, two typical commutation modes for ANPC inverters, namely the outer mode and the inner mode, are studied, and the separate switching loops and parasitic inductances are identified according to the parasitic model. Knowing this, double-pulse tests (DPTs) for each type of commutation are conducted. The differences in terms of switching characteristics and switching dissipations are fully revealed. The conclusion drawn can be utilized for developing the next-generation highly efficient and reliable SiC MOSFET based 3L-ANPC inverters.
引用
收藏
页数：7
相关论文
共 21 条
[1]  
[Anonymous], 2017, IEA REPORT
[2]   Performance Evaluation of a Three-Level ANPC Photovoltaic Grid-Connected Inverter With 650-V SiC Devices and Optimized PWM [J].
Barater, Davide ;
Concari, Carlo ;
Buticchi, Giampaolo ;
Gurpinar, Emre ;
De, Dipankar ;
Castellazzi, Alberto .
IEEE TRANSACTIONS ON INDUSTRY APPLICATIONS, 2016, 52 (03) :2475-2485
[3]   The active NPC converter and its loss-balancing control [J].
Brückner, T ;
Bernet, S ;
Güldner, H .
IEEE TRANSACTIONS ON INDUSTRIAL ELECTRONICS, 2005, 52 (03) :855-868
[4]  
Brückner T, 2001, IEEE POWER ELECTRON, P1135, DOI 10.1109/PESC.2001.954272
[5]   The Impact of Nonlinear Junction Capacitance on Switching Transient and Its Modeling for SiC MOSFET [J].
Chen, Kainan ;
Zhao, Zhengming ;
Yuan, Liqiang ;
Lu, Ting ;
He, Fanbo .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015, 62 (02) :333-338
[6]  
Chen MX, 2019, APPL POWER ELECT CO, P2826, DOI 10.1109/APEC.2019.8721934
[7]   Improved SiC Power MOSFET Model Considering Nonlinear Junction Capacitances [J].
Duan, Zhuolin ;
Fan, Tao ;
Wen, Xuhui ;
Zhang, Dong .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2018, 33 (03) :2509-2517
[8]  
Hazra S, 2013, IEEE ENER CONV, P4278, DOI 10.1109/ECCE.2013.6647272
[9]  
Izumi Toru, 2016, 2016 19 INT C EL MAC, P1
[10]   Switching Performance Optimization of a High Power High Frequency Three-Level Active Neutral Point Clamped Phase Leg [J].
Jiao, Yang ;
Lu, Sizhao ;
Lee, Fred C. .
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (07) :3255-3266
123