Analysis of the non linear domain wall response in ferroelectric thin films

被引:11
作者
Bharadwaja, SSN [1 ]
Damjanovic, D [1 ]
Setter, N [1 ]
机构
[1] Ecole Polytech Fed Lausanne, Fac Engn, Mat Inst, Ceram Lab, CH-1015 Lausanne, Switzerland
关键词
thin films; dielectric relaxation; nonlinearity; ferroelectric;
D O I
10.1080/00150190490456583
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In ferroelectric materials, domain wall displacement plays a key role in the dielectric properties measured with respect to the driving field amplitude and frequency. The low to medium field dielectric response in many ferroic systems can be often described by classical Rayleigh model, which is rate-independent i.e., it depends only on the strength of ac signal. However experiments show that the nonlinear parameters are frequency dependent. Thus a more general approach, which can describe both purely nonlinear, rate independent, and frequency dependent mechanisms is sought. Here, we show that a coupled power law and Rayleigh-type responses describe well nonlinear and dispersive complex dielectric permittivity in Pb(ZrTi)O-3 thin films over a broad frequency (0.01-100 kHz) and field amplitude range.
引用
收藏
页码:59 / 63
页数:5
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