Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

被引:5
作者
Kuo, Wei-Cheng [1 ]
Lee, Ming Jay [2 ]
Wu, Mount-Learn [2 ]
Lee, Chien-Chieh [3 ]
Tsao, I-Yu [1 ]
Chang, Jenq-Yang [2 ]
机构
[1] Natl Cent Univ, Inst Mat Sci & Engn, Taoyuan, Taiwan
[2] Natl Cent Univ, Dept Opt & Photon, Taoyuan, Taiwan
[3] Natl Cent Univ, Opt Sci Ctr, Taoyuan, Taiwan
关键词
Heavy doped; Photodetector; Ge/Si; Low temperature; Electron cyclotron resonance chemical; vapor deposition; CHEMICAL-VAPOR-DEPOSITION; GERMANIUM THIN-FILMS; SI; SILICON; SI(100); LAYERS;
D O I
10.1016/j.sse.2017.01.010
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 degrees C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 x 10(-7) A at a reverse bias of 1 V. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:41 / 44
页数:4
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