Capacitor-embedded 0.54 pJ/bit silicon-slot photonic crystal waveguide modulator

被引：43

作者：

Chen, Xiaonan ^{[1
]}

Chen, Yun-Sheng ^{[1
]}

Zhao, Yang ^{[1
]}

Jiang, Wei ^{[2
,3
]}

Chen, Ray T. ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78758 USA

[2] Rutgers State Univ, Dept Elect & Comp Engn, Piscataway, NJ 08854 USA

[3] Rutgers State Univ, Inst Adv Mat, Inst Adv Mat Devices & Nanotechnol, Piscataway, NJ 08854 USA

来源：

OPTICS LETTERS | 2009年 / 34卷 / 05期

基金：

美国国家科学基金会;

关键词：

MACH-ZEHNDER MODULATOR; COMPACT;

D O I：

10.1364/OL.34.000602

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A high-speed compact silicon modulator based on the lateral capacitor configuration is experimentally demonstrated with low-power consumption and 3 dB modulation depth. The capacitor layout is introduced to scale down the total modulator capacitance to 30 x 10(-15) F, which effectively reduces the rf power consumption to 0.54 pJ/bit. Exploiting the slow group velocity of light in the slot photonic crystal waveguides, the device reported herein exhibits higher modulation efficiency than conventional capacitor modulator and provides a V pi L figure of merit of 0.18 V cm at the wavelength of 1.548 nm. (C) 2009 Optical Society of America

引用

页码：602 / 604

页数：3

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