Room-temperature mid-infrared "M"-type GaAsSb/InGaAs quantum well lasers on InP substrate

被引：15
作者：
Chang, Chia-Hao [1 ]
Li, Zong-Lin [1 ]
Pan, Chien-Hung [1 ]
Lu, Hong-Ting [1 ]
Lee, Chien-Ping [1 ]
Lin, Sheng-Di [1 ]
机构：
[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 30010, Taiwan
来源：
JOURNAL OF APPLIED PHYSICS | 2014年 / 115卷 / 06期
关键词：
DIODE-LASERS;
D O I：
10.1063/1.4865170
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have demonstrated experimentally the InP-based "M"-type GaAsSb/InGaAs quantum-well (QW) laser lasing at 2.41 mu m at room temperature by optical pumping. The threshold power density per QW and extracted internal loss were about 234 W/cm(2) and 20.5 cm(-1), respectively. The temperature-dependent photoluminescence (PL) and lasing spectra revealed interesting characteristics for this type of lasers. Two distinct regions in the temperature dependent threshold behavior were observed and the transition temperature was found to coincide with the cross over point of the PL and lasing emission peaks. The current-voltage characteristic of "M"-type QW laser was superior to the inverse "W"-type one due to its thinner barrier for holes. Further improvement of the "M"-type QW structure could lead to a cost-effective mid-infrared light source. (C) 2014 AIP Publishing LLC.
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页数：5
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