Negative quantum capacitance in graphene nanoribbons with lateral gates

被引：13

作者：

Reiter, R. ^{[1
]}

Derra, U. ^{[2
,3
]}

Birner, S. ^{[4
]}

Terres, B. ^{[2
,3
]}

Libisch, F. ^{[1
,5
]}

Burgdoerfer, J. ^{[1
]}

Stampfer, C. ^{[2
,3
]}

机构：

[1] Vienna Univ Technol, Inst Theoret Phys, AT-1040 Vienna, Austria

[2] Rhein Westfal TH Aachen, JARA FIT, D-52074 Aachen, Germany

[3] Rhein Westfal TH Aachen, Inst Phys 2, D-52074 Aachen, Germany

[4] Tech Univ Munich, Dept Phys, Walter Schottky Inst, D-85748 Garching, Germany

[5] Princeton Univ, Dept Mech & Aerosp Engn, Princeton, NJ 08544 USA

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 11期

关键词：

FIELD-EFFECT TRANSISTORS; ELECTRON;

D O I：

10.1103/PhysRevB.89.115406

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We present numerical simulations of the capacitive coupling between graphene nanoribbons of various widths and gate electrodes in different configurations. We compare the influence of lateral metallic or graphene side gate structures on the overall back gate capacitive coupling. Most interestingly, we find a complex interplay between quantum capacitance effects in the graphene nanoribbon and the lateral graphene side gates, giving rise to an unconventional negative quantum capacitance. The emerging nonlinear capacitive couplings are investigated in detail. The experimentally relevant relative lever arm, the ratio between the coupling of the different gate structures, is discussed.

引用

页数：8

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