Avalanche multiplication and breakdown in 4H-SiC diodes

被引:3
作者
Ng, BK
David, JPR
Massey, DJ
Tozer, RC
Rees, GJ
Yan, F
Zhao, JH
Weiner, M
机构
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Singapore 639798, Singapore
[2] Univ Sheffield, Dept Elect & Elect Engn, Sheffield S1 3JD, S Yorkshire, England
[3] Rutgers State Univ, Dept Elect & Comp Engn, Princeton, NJ 08540 USA
[4] United Silicon Carbide Inc, New Brunswick, NJ 08901 USA
来源
SILICON CARBIDE AND RELATED MATERIALS 2003, PRTS 1 AND 2 | 2004年 / 457-460卷
关键词
avalanche photodiodes; impact ionization; avalanche breakdown; 4H-SiC; dead space; avalanche multiplication; breakdown voltage; nonlocal effects;
D O I
10.4028/www.scientific.net/MSF.457-460.1069
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The measured photomultiplication and excess noise characteristics of two 4H-SiC p-i-n diodes, with i-region widths of 0.105 mum and 0.285 mum, were modelled using a nonlocal multiplication model to determine the ionization threshold energies and the impact ionization coefficients of 4H-SiC. The modelled ionization coefficients accurately predicted the breakdown voltage of a 0.485 mum p-i-n structure. The breakdown voltage of 4H-SiC calculated using these parameters is approximately 7.2 and 4.6 times higher than that of similar Si and Al0.8Ga0.2As structures respectively. Dead space, the minimum distance required for carriers to equilibrate in the electric field, has to be taken into account to accurately predict the breakdown voltage in thin devices.
引用
收藏
页码:1069 / 1072
页数:4
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