Aryl Halide C-C Coupling on Ge(001):H Surfaces

被引：7

作者：

Olszowski, P. ^{[1
]}

Zapotoczny, B. ^{[1
]}

Prauzner-Bechcicki, J. S. ^{[1
]}

Vilas-Varela, M. ^{[2
,3
]}

Perez, D. ^{[2
,3
]}

Guitian, E. ^{[2
,3
]}

Pena, D. ^{[2
,3
]}

Szymonski, M. ^{[1
]}

机构：

[1] Jagiellonian Univ, Inst Phys, Res Ctr Nanometer Scale Sci & Adv Mat NANOSAM, Fac Phys Astron & Appl Comp Sci, PL-30348 Krakow, Poland

[2] Univ Santiago de Compostela, Ctr Invest Quim Biol & Mat Mol CIQUS, Santiago De Compostela 15782, Spain

[3] Univ Santiago de Compostela, Dept Quim Organ, Santiago De Compostela 15782, Spain

来源：

JOURNAL OF PHYSICAL CHEMISTRY C | 2015年 / 119卷 / 49期

关键词：

POLYMERIZATION; MOLECULE; SCALE;

D O I：

10.1021/acs.jpcc.5b08883

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Thermally induced aryl halide C-C coupling on surfaces of hydrogen-passivated germanium, Ge(001):H, has been investigated by scanning tunneling microscopy at room temperature. It has been shown that an atomic hydrogen buffer layer is essential for C-C coupling to occur. Competition between dehydrogenation of the passivating layer and dehalogenation of molecular precursors as a function of substrate temperature during the deposition of molecules is discussed.

引用

页码：27478 / 27482

页数：5

共 23 条

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