Tungsten hexacarbonyl and hydrogen peroxide as precursors for the growth of tungsten oxide thin films on titania nanoparticles

被引:11
作者
Jackson, David H. K. [1 ]
Dunn, Bryan A. [1 ]
Guan, Yingxin [1 ]
Kuech, Thomas F. [1 ]
机构
[1] Univ Wisconsin, Dept Chem & Biol Engn, Madison, WI 53706 USA
基金
美国国家科学基金会;
关键词
materials; catalysis; nanotechnology; ATOMIC LAYER DEPOSITION; CHEMICAL-VAPOR-DEPOSITION; PHOTOCATALYTIC ACTIVITY; ZIRCONIUM-OXIDE; WATER; MOLYBDENUM; CATALYST; ALUMINA;
D O I
10.1002/aic.14397
中图分类号
TQ [化学工业];
学科分类号
0817 ;
摘要
W(CO)(6) and H2O2 were used in an atomic layer deposition (ALD)-like process to grow thin WOx films onto TiO2 powders in a fluidized bed reactor. Carbonyl precursors are not widely used in this application, so that deviations from an ideal ALD process, previously not examined with W(CO)(6), were identified. The resulting WOx films were a result of both ALD-like and chemical vapor deposition-based growth modes. A chemical reaction mechanism incorporating a combination of these two growth modes was inferred. As the move to expand the range of ALD precursors meets with the desire to scale up these processes, the simultaneous appearance of both these growth modes is likely to become more and more common, and so understanding the interaction of these two types of surface reactions is key to progress in the field. The films were observed to inhibit the anatase-to-rutile phase transformation in the TiO2 powders upon high temperature annealing, while crystallization of the amorphous WO3 was also not observed. Changes in the local bonding within the WO3 were observed and associated with changes in the structural nature of the film and its interface to the substrate. (c) 2014 American Institute of Chemical Engineers AIChE J, 60: 1278-1286, 2014
引用
收藏
页码:1278 / 1286
页数:9
相关论文
共 40 条
[1]  
[Anonymous], 1984, DEG TECHN B, V56, P8
[2]   Atmospheric Pressure Process for Coating Particles Using Atomic Layer Deposition [J].
Beetstra, Renske ;
Lafont, Ugo ;
Nijenhuis, John ;
Kelder, Erik M. ;
van Ommen, J. Ruud .
CHEMICAL VAPOR DEPOSITION, 2009, 15 (7-9) :227-233
[3]   Atomic layer deposition of tungsten(III) oxide thin films from W2(NMe2)6 and water:: Precursor-based control of oxidation state in the thin film material [J].
Dezelah, Charles L. ;
El-Kadri, Oussama M. ;
Szilagyi, Imre M. ;
Campbell, Joseph M. ;
Arstila, Kai ;
Niinisto, Lauri ;
Winter, Charles H. .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2006, 128 (30) :9638-9639
[4]   Growth of thin films of molybdenum oxide by atomic layer deposition [J].
Diskus, Madeleine ;
Nilsen, Ola ;
Fjellvag, Helmer .
JOURNAL OF MATERIALS CHEMISTRY, 2011, 21 (03) :705-710
[5]   Oxide materials for development of integrated gas sensors - A comprehensive review [J].
Eranna, G ;
Joshi, BC ;
Runthala, DP ;
Gupta, RP .
CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 2004, 29 (3-4) :111-188
[6]  
Fairley N, 2009, CasaXPS Manual 2.3.15: spectroscopy
[7]   Surface modifications of electrode materials for lithium ion batteries [J].
Fu, LJ ;
Liu, H ;
Li, C ;
Wu, YP ;
Rahm, E ;
Holze, R ;
Wu, HQ .
SOLID STATE SCIENCES, 2006, 8 (02) :113-128
[8]   Atomic Layer Deposition: An Overview [J].
George, Steven M. .
CHEMICAL REVIEWS, 2010, 110 (01) :111-131
[9]   Investigation of the structure of tungsten oxide films obtained by chemical vapor deposition [J].
Gogova, D ;
Gesheva, K ;
Kakanakova-Georgieva, A ;
Surtchev, M .
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS, 2000, 11 (03) :167-174
[10]  
Gogova D, 1999, PHYS STATUS SOLIDI A, V176, P969, DOI 10.1002/(SICI)1521-396X(199912)176:2<969::AID-PSSA969>3.0.CO