Electric and magnetic characterization of impurity-induced states in diluted magnetic Pb1-yYbyTe semiconductors

被引：17

作者：

Skipetrov, EP ^{[1
]}

Chernova, NA

Skipetrova, LA

Slyn'ko, EI

机构：

[1] Moscow MV Lomonosov State Univ, Dept Phys, Moscow 119899, Russia

[2] Inst Mat Sci Problems, UA-274001 Chernovtsy, Ukraine

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2002年 / 91卷

关键词：

lead telluride; magnetic semiconductors; doping effect; electron states; diamagnetism and paramagnetism;

D O I：

10.1016/S0921-5107(01)01041-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In the present paper we report on results obtained by complex investigations of galvanomagnetic and magnetic propel-ties of a diluted magnetic semiconductor Pb1-yYbyTe. Ytterbium doping modifies the energy spectrum of charge carriers in lead telluride by formation of deep impurity levels, moving from valence to forbidden band with increase of ytterbium content. The paramagnetic Curie-Weiss response observed has revealed a small fraction of Yb ions in magnetically active Yb3+ charge state, while the majority of impurity ions are in non-magnetic Yb2+ state. We couple the magnetic and galvanomagnetic data in a model of charge carriers energy spectrum in Pb1-yYbyTe, for which energy position and electron population of the ytterbium level are derived as a function of impurity concentration. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：412 / 415

页数：4

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