A multigigahertz multimodulus frequency divider in 90-nm CMOS

被引：14

作者：

Ali, Moustafa ^{[1
]}

Hegazi, Emad ^{[1
]}

机构：

[1] Ain Shams Univ, Elect & Commun Engn Dept, Cairo 11371, Egypt

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2006年 / 53卷 / 12期

关键词：

CML; frequency divider; low power; multimodulus; 90-nm bulk CMOS;

D O I：

10.1109/TCSII.2006.885069

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This brief presents a multimodulus frequency divider with division ratio between 64 and 127 fabricated in 90-nm CMOS. By using a load-switching technique, high operating frequency, and low power static divider was achieved. The divider consists of six 2/3 divider stages. The maximum operating frequency is 4.7 GHz with current consumption 2.3 mA at low voltage supply 1.2 V and rms cycle-to-cycle jitter lower than 1 ps.

引用

页码：1333 / 1337

页数：5

共 9 条

[1] Fully integrated CMOS fractional-N frequency divider for wide-band mobile applications with spurs reduction [J].