Atomic structure and electronic states of nickel and copper silicides in silicon

被引：34

作者：

Schröter, W ^{[1
]}

Kveder, V ^{[1
]}

Seibt, M ^{[1
]}

Ewe, H ^{[1
]}

Hedemann, H ^{[1
]}

Riedel, F ^{[1
]}

Sattler, A ^{[1
]}

机构：

[1] Univ Gottingen, Inst Phys 4, D-37073 Gottingen, Germany

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 72卷 / 2-3期

关键词：

silicide precipitates; silicon; DLTS; EBIC; HRTEM; deep levels;

D O I：

10.1016/S0921-5107(99)00499-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

This paper summarizes current understanding of structural and electronic properties of nickel and copper silicide precipitates in silicon. From high-resolution electron microscopy studies it has been concluded that metastable structures form during early stages of precipitation which transform into energetically more favourable configurations during additional annealing or slow cooling. These structural transformations are related to changes of the electronic structure of the precipitates as revealed by deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). Deep bandlike states at initially formed NiSi2-and Cu,Si-platelets detected by DLTS have been attributed to a bounding dislocation and precipitate/matrix interfaces, respectively. Large NiSi2-precipitates act as internal Schottky barriers and may control the minority carrier lifetime of silicon samples. Recent advances in modeling EBIC contrasts provide insight how metal impurities affect the electrical behaviour of dislocations at different degrees of decoration. (C) 2000 Elsevier Science S.A. All rights reserved.

引用

页码：80 / 86

页数：7

共 27 条

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