Atomic structure and electronic states of nickel and copper silicides in silicon

被引:34
作者
Schröter, W [1 ]
Kveder, V [1 ]
Seibt, M [1 ]
Ewe, H [1 ]
Hedemann, H [1 ]
Riedel, F [1 ]
Sattler, A [1 ]
机构
[1] Univ Gottingen, Inst Phys 4, D-37073 Gottingen, Germany
来源
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2000年 / 72卷 / 2-3期
关键词
silicide precipitates; silicon; DLTS; EBIC; HRTEM; deep levels;
D O I
10.1016/S0921-5107(99)00499-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
This paper summarizes current understanding of structural and electronic properties of nickel and copper silicide precipitates in silicon. From high-resolution electron microscopy studies it has been concluded that metastable structures form during early stages of precipitation which transform into energetically more favourable configurations during additional annealing or slow cooling. These structural transformations are related to changes of the electronic structure of the precipitates as revealed by deep level transient spectroscopy (DLTS) and electron beam induced current (EBIC). Deep bandlike states at initially formed NiSi2-and Cu,Si-platelets detected by DLTS have been attributed to a bounding dislocation and precipitate/matrix interfaces, respectively. Large NiSi2-precipitates act as internal Schottky barriers and may control the minority carrier lifetime of silicon samples. Recent advances in modeling EBIC contrasts provide insight how metal impurities affect the electrical behaviour of dislocations at different degrees of decoration. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码:80 / 86
页数:7
相关论文
共 27 条
[1]   THE MAXIMUM CHARGE-COLLECTION CONTRAST OF A SPHERICAL DEFECT OR A SURFACE-PARALLEL DISLOCATION [J].
DONOLATO, C .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1993, 135 (01) :K13-K15
[2]  
EWE H, 1994, SEMICONDUCTOR SILICO, P796
[3]   Deep-level transient-spectroscopy for localized states at extended defects in semiconductors [J].
Hedemann, H ;
Schroter, W .
JOURNAL DE PHYSIQUE III, 1997, 7 (07) :1389-1398
[4]   INFLUENCE OF HYDROGEN ON THE ELECTRICAL AND OPTICAL-ACTIVITY OF MISFIT DISLOCATIONS IN SI/SIGE EPILAYERS [J].
HIGGS, V ;
KITTLER, M .
APPLIED PHYSICS LETTERS, 1994, 65 (22) :2804-2806
[5]   Electrical and recombination properties of copper-silicide precipitates in silicon [J].
Istratov, AA ;
Hedemann, H ;
Seibt, M ;
Vyvenko, OF ;
Schroter, W ;
Heiser, T ;
Flink, C ;
Hieslmair, H ;
Weber, ER .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1998, 145 (11) :3889-3898
[6]   Influence of Cu contamination and hydrogenation on recombination activity of misfit dislocations in SiGe/Si epilayers [J].
Kittler, M ;
UlhaqBouillet, C ;
Higgs, V .
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :383-387
[7]   RECOMBINATION PROPERTIES OF STRUCTURALLY WELL DEFINED NISI2 PRECIPITATES IN SILICON [J].
KITTLER, M ;
LARZ, J ;
SEIFERT, W ;
SEIBT, M ;
SCHROTER, W .
APPLIED PHYSICS LETTERS, 1991, 58 (09) :911-913
[8]  
Kittler M, 1999, SOLID STATE PHENOM, V70, P417
[9]   EBIC defect characterisation: State of understanding and problems of interpretation [J].
Kittler, M ;
Seifert, W .
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1996, 42 (1-3) :8-13
[10]   Analysis of the recombination-active region around extended defects in silicon [J].
Kittler, M ;
Seifert, W .
ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- :1123-1127