Strontium-doped lanthanum manganite coatings crystallised after air annealing of amorphous co-sputtered films

被引：7

作者：

Capon, F. ^{[1
]}

Horwat, D. ^{[1
]}

Pierson, J. F. ^{[1
]}

Chapusot, V. ^{[2
]}

Billard, A. ^{[3
]}

机构：

[1] Nancy Univ, Ecole Mines, Dept CP2S, Inst Jean Lamour,CNRS,UMR 7198, F-54042 Nancy, France

[2] PVDco SARL, F-54120 Baccarat, France

[3] LERMPS UTBM, F-90910 Belfort, France

来源：

MATERIALS CHEMISTRY AND PHYSICS | 2009年 / 116卷 / 01期

关键词：

Oxides; Thin films; Sputtering; Crystallisation; THIN-FILMS; CATALYTIC-PROPERTIES; MAGNETIC-PROPERTIES; LOW-FREQUENCY; SR; DEPOSITION; SUBSTRATE; GROWTH; OXIDES; RF;

D O I：

10.1016/j.matchemphys.2009.03.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Strontium-doped lanthanum manganite films were deposited on steel, silicon and yttria stabilised zirconia substrates by reactive co-sputtering of La0.85Sr0.15 and Mn targets in a Ar-O-2 gas mixture. In this study, the discharge current applied to the manganese target was varied to adjust the film composition whereas that of the La-Sr target was maintained at a constant value of 1 A. The use of 0.4 A dissipated on the Mn target allowed the formation of a film with the La0.85Sr0.15MnO3 stoichiometric composition. As-deposited films were amorphous and exhibited a dense brittle fracture cross-section. Air annealing for 1 h at 700 degrees C induced the crystallisation in the expected perovskite structure of the coatings with a (La + Sr)/Mn atomic ratio ranging between 0.87 and 1. This crystallisation came with a strong improvement of the film electrical conductivity at room temperature. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：219 / 222

页数：4

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