High-Sensitivity Photodetectors Based on Multilayer GaTe Flakes

被引：328

作者：

Liu, Fucai ^{[1
]}

Shimotani, Hidekazu ^{[2
]}

Shang, Hui ^{[2
]}

Kanagasekaran, Thangavel ^{[1
]}

Zolyomi, Viktor ^{[3
]}

Drummond, Neil ^{[3
]}

Fal'ko, Vladimir I. ^{[3
]}

Tanigaki, Katsumi ^{[1
,2
]}

机构：

[1] Tohoku Univ, WPI Adv Inst Mat Res AIMR, Sendai, Miyagi 9808577, Japan

[2] Tohoku Univ, Dept Phys, Sendai, Miyagi 9808577, Japan

[3] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

ACS NANO | 2014年 / 8卷 / 01期

关键词：

gallium telluride; layered material; transistor; photodetector; responsivity; GASE; PHOTOTRANSISTORS; TRANSITION; HETEROSTRUCTURES; PHOTORESPONSE; ULTRAVIOLET; TRANSISTORS; NANOSHEETS;

D O I：

10.1021/nn4054039

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Optoelectronic devices based on layered materials such as graphene have resulted in significant interest due to their unique properties and potential technological applications. The electric and optoelectronic properties of nano GaTe flakes as layered materials are described in this article. The transistor fabricated from multilayer Gale shows a p-type action with a hole mobility of about 0.2 cm(2) V-1 s(-1). The gate transistor exhibits a high photoresponsivity of 10(4) A/W, which is greatly better than that of graphene, MoS2, and other layered compounds. Meanwhile, the response speed of 6 ms is also very fast. Both the high photoresponsivity and the fast response time described in the present study strongly suggest that multilayer Gale is a promising candidate for future optoelectronic and photosensitive device applications.

引用

页码：752 / 760

页数：9

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