Li-ion site disorder driven superionic conductivity in solid electrolytes: a first-principles investigation of β-Li3PS4
被引:56
作者:
Dathar, Gopi Krishna Phani
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Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
Samsung Adv Inst Technol, Samsung Res Inst, Bangalore, Karnataka, IndiaOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
Dathar, Gopi Krishna Phani
[1
,3
]
Balachandran, Janakiraman
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Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
Balachandran, Janakiraman
[1
]
Kent, Paul R. C.
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机构:
Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
Oak Ridge Natl Lab, Comp Sci & Math Div, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
Kent, Paul R. C.
[1
,2
]
Rondinone, Adam J.
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Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
Rondinone, Adam J.
[1
]
Ganesh, P.
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Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USAOak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
Ganesh, P.
[1
]
机构:
[1] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA
[2] Oak Ridge Natl Lab, Comp Sci & Math Div, Oak Ridge, TN 37831 USA
[3] Samsung Adv Inst Technol, Samsung Res Inst, Bangalore, Karnataka, India
The attractive safety and long-term stability of all solid-state batteries has added a new impetus to the discovery and development of solid electrolytes for lithium batteries. Recently several superionic lithium conducting solid electrolytes have been discovered. All the superionic lithium containing compounds (beta-Li3PS4 and Li10GeP2S12 and oxides, predominantly in the garnet phase) have partially occupied sites. This naturally begs the question of understanding the role of partial site occupancies (or site disorder) in optimizing ionic conductivity in these family of solids. We find that for a given topology of the host lattice, maximizing the number of sites with similar Li-ion adsorption energies, which gives partial site occupancy, is a natural way to increase the configurational entropy of the system and optimize the conductivity. For a given topology and density of Li-ion adsorption sites, the ionic conductivity is maximal when the number of mobile Li-ions are equal to the number of mobile vacancies, also the very condition for achieving maximal configurational entropy. We demonstrate applicability of this principle by elucidating the role of Li-ion site disorder and the local chemical environment in the high ionic conductivity of beta-Li3PS4. In addition, for beta-Li3PS4 we find that a significant density of vacancies in the Li-ion sub-lattice (similar to 25%) leads to sub-lattice melting at (similar to 600 K) leading to a molten form for the Li-ions in an otherwise solid anionic host. This gives a lithium site occupancy that is similar to what is measured experimentally. We further show that quenching this disorder can improve conductivity at lower temperatures. As a consequence, we discover that (a) one can optimize ionic conductivity in a given topology by choosing a chemistry/composition that maximizes the number of mobile-carriers i.e. maximizing both mobile Li-ions and vacancies, and (b) when the concentration of vacancies becomes significant in the Li-ion sub-lattice, it becomes energetically as well as entropically favorable for it to remain molten well below the bulk decomposition temperature of the solid. This principle may already apply to several known superionic conducting solids.
机构:
USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USAUSN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
Bernstein, N.
;
Johannes, M. D.
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USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USAUSN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
Johannes, M. D.
;
Khang Hoang
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机构:
USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
George Mason Univ, Computat Mat Sci Ctr, Fairfax, VA 22030 USAUSN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Bo, Shou-Hang
;
Wang, Yan
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MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Wang, Yan
;
Kim, Jae Chul
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机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Kim, Jae Chul
;
Richards, William Davidson
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MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Richards, William Davidson
;
Ceder, Gerbrand
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机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
机构:
USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USAUSN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
Bernstein, N.
;
Johannes, M. D.
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h-index: 0
机构:
USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USAUSN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
Johannes, M. D.
;
Khang Hoang
论文数: 0引用数: 0
h-index: 0
机构:
USN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
George Mason Univ, Computat Mat Sci Ctr, Fairfax, VA 22030 USAUSN, Res Lab, Ctr Computat Mat Sci, Washington, DC 20375 USA
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Bo, Shou-Hang
;
Wang, Yan
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Wang, Yan
;
Kim, Jae Chul
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Univ Calif Berkeley, Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Kim, Jae Chul
;
Richards, William Davidson
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Richards, William Davidson
;
Ceder, Gerbrand
论文数: 0引用数: 0
h-index: 0
机构:
MIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA
Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USAMIT, Dept Mat Sci & Engn, Cambridge, MA 02139 USA