Transport properties of ultra-thin VO2 films on (001) TiO2 grown by reactive molecular-beam epitaxy

被引：100

作者：

Paik, Hanjong ^{[1
]}

Moyer, Jarrett A. ^{[2
,3
]}

Spila, Timothy ^{[3
]}

Tashman, Joshua W. ^{[1
]}

Mundy, Julia A. ^{[4
]}

Freeman, Eugene ^{[5
]}

Shukla, Nikhil ^{[5
]}

Lapano, Jason M. ^{[6
]}

Engel-Herbert, Roman ^{[6
]}

Zander, Willi ^{[7
]}

Schubert, Juergen ^{[7
]}

Muller, David A. ^{[4
,8
]}

Datta, Suman ^{[5
]}

Schiffer, Peter ^{[2
,3
]}

Schlom, Darrell G. ^{[8
]}

机构：

[1] Cornell Univ, Dept Mat Sci & Engn, Ithaca, NY 14853 USA

[2] Univ Illinois, Dept Phys, Urbana, IL 61801 USA

[3] Univ Illinois, Mat Res Lab, Urbana, IL 61801 USA

[4] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[5] Penn State Univ, Dept Elect Engn, University Pk, PA 16802 USA

[6] Penn State Univ, Dept Mat Sci & Engn, University Pk, PA 16802 USA

[7] Res Ctr Julich, Peter Grunberg Inst PGI9 IT, JARA Fundamentals Future Informat Technol, D-52425 Julich, Germany

[8] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14853 USA

来源：

APPLIED PHYSICS LETTERS | 2015年 / 107卷 / 16期

基金：

美国国家科学基金会;

关键词：

METAL-INSULATOR-TRANSITION; VANADIUM DIOXIDE; CRYSTALS; SURFACES;

D O I：

10.1063/1.4932123

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the growth of (001)-oriented VO2 films as thin as 1.5 nm with abrupt and reproducible metal-insulator transitions (MIT) without a capping layer. Limitations to the growth of thinner films with sharp MITs are discussed, including the Volmer-Weber type growth mode due to the high energy of the (001) VO2 surface. Another key limitation is interdiffusion with the (001) TiO2 substrate, which we quantify using low angle annular dark field scanning transmission electron microscopy in conjunction with electron energy loss spectroscopy. We find that controlling island coalescence on the (001) surface and minimization of cation interdiffusion by using a low growth temperature followed by a brief anneal at higher temperature are crucial for realizing ultrathin VO2 films with abrupt MIT behavior. (C) 2015 AIP Publishing LLC.

引用

页数：5

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