Effects of annealing on the structural and optical properties of zinc sulfide thin films deposited by ion beam sputtering

被引：78

作者：

Kennedy, J. ^{[1
,2
]}

Murmu, P. P. ^{[1
]}

Gupta, P. S. ^{[1
,3
]}

Carder, D. A. ^{[2
,4
]}

Chong, S. V. ^{[2
,5
]}

Leveneur, J. ^{[1
]}

Rubanov, S. ^{[6
]}

机构：

[1] GNS Sci, Natl Isotope Ctr, Lower Hutt 5010, New Zealand

[2] MacDiarmid Inst Adv Mat & Nanotechnol, Wellington, New Zealand

[3] SRM Univ, Dept Phys & Nanotechnol, Madras 603203, Tamil Nadu, India

[4] Callaghan Innovat, Lower Hutt 5010, New Zealand

[5] Victoria Univ Wellington, Robinson Res Inst, Lower Hutt 5046, New Zealand

[6] Univ Melbourne, Inst Bio21, Melbourne, Vic 3010, Australia

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2014年 / 26卷

关键词：

ZnS; Ion beam sputtering; RBS; TEM; UV-visible spectroscopy; ZNS; TRANSITION; NANOSTRUCTURES; TRANSFORMATION; NANOPARTICLES; GROWTH;

D O I：

10.1016/j.mssp.2014.05.055

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report the structural and optical properties of ZnS thin films fabricated by ion-beam sputtering. X-ray diffraction (XRD) and transmission electron microscopy (TEM) results revealed a polycrystalline ZnS film with zinc blende phase as manifested by diffraction from the (111), (220) and (311) planes. Annealing resulted in the appearance of a metastable wurtzite phase with a concentration up to 26.6%. An energy bandgap, estimated from absorption spectra, was found to vary between 3.32 and 3.40 eV. The lower energy of this bandgap, as compared to bulk ZnS, is associated with the structural point defects along with mixed zinc blende and wurtzite phases of the polycrystalline ZnS films. Ion beam sputtering deposition can be used to tune the optical bandgap for potential applications in optoelectronic materials. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：561 / 566

页数：6

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