Epitaxial thin film GaAs deposited by MOCVD on Low-Cost, Flexible Substrates for High Efficiency Photovoltaics

被引：0
|
作者：
Dutta, P. [1 ]
Rathi, M. [2 ]
Ahrenkiel, P. [2 ]
Gao, Y. [1 ]
Mehrotra, A. [1 ]
Galstyan, E. [1 ]
Iliev, M. [1 ]
Makarenko, B. [1 ]
Forrest, R. [1 ]
Freundlich, A. [1 ]
Selvamanickam, V. [1 ]
机构：
[1] Univ Houston, Houston, TX 77204 USA
[2] South Dakota Sch Mines & Technol, Rapid City, SD 57701 USA
来源：
2013 IEEE 39TH PHOTOVOLTAIC SPECIALISTS CONFERENCE (PVSC) | 2013年
关键词：
Epitaxial growth; Gallium arsenide; flexible substrate; MOCVD; solar cells;
D O I：
暂无
中图分类号：
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号：
0807 ; 0820 ;
摘要：
Growth of epitaxial GaAs thin film on flexible, inexpensive substrates can open up the possibility of fabricating affordable and high efficiency III-V photovoltaics which may lead to a complete transformation of the PV market. Here we report the successful hetero-epitaxial growth of GaAs thin film by metal organic chemical vapor deposition on single-crystallinelike Ge thin film on flexible metal foils. GaAs epilayers showed (001) orientation with zinc blende structure and good optoelectronic quality with minimal thermoelasticflattice mismatch strain. High doping density due to Ge diffusion from the substrate was observed in the GaAs film with a Hall mobility of 285 cm(2)/V-s. XPS depth profiles showed significant diffusion of Ge in GaAs thin film.
引用
收藏
页码：3393 / 3396
页数：4
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