Electrically pumped room-temperature operation of GaAs1-xBix laser diodes with low-temperature dependence of oscillation wavelength

被引：41

作者：

Fuyuki, Takuma ^{[1
]}

Yoshida, Kenji ^{[1
]}

Yoshioka, Ryo ^{[1
]}

Yoshimoto, Masahiro ^{[1
]}

机构：

[1] Kyoto Inst Technol, Dept Elect, Kyoto 6068585, Japan

来源：

APPLIED PHYSICS EXPRESS | 2014年 / 7卷 / 08期

基金：

日本学术振兴会;

关键词：

MOLECULAR-BEAM EPITAXY; BAND-GAP; GROWTH; BI;

D O I：

10.7567/APEX.7.082101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lasing oscillation at wavelengths up to 1045 nm at room temperature has been realized from GaAs1-xBix Fabry-Perot laser diodes (FP-LDs) by electrical injection, and the temperature characteristics of GaAs1-xBix FP-LDs are revealed for the first time. The characteristic temperature T-0 of the GaAs0.97Bi0.03 FP-LD in the temperature range between 15 and 40 degrees C (T-0 = 125K) is similar to that reported for typical 0.98 mu m InGaAs/GaAs LDs. The temperature coefficient of the lasing wavelength in GaAs0.97Bi0.03 FP-LDs is reduced to 0.17 nm/K, which is only 45% of that of GaAs FP-LDs. (C) 2014 The Japan Society of Applied Physics

引用

页数：4

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