Efficient tristable resistive memory based on single layer graphene/insulating polymer multi-stacking layer

被引：53

作者：

Wu, Chaoxing ^{[1
]}

Li, Fushan ^{[1
]}

Guo, Tailiang ^{[1
]}

机构：

[1] Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2014年 / 104卷 / 18期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

DEVICES; OXIDE;

D O I：

10.1063/1.4875596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tristable resistive memories based on single layer graphene (SLG)/insulating polymer multi-stacking layer were fabricated. By using the traditional transfer method, the chemical vapor deposition-synthesized SLG serving as charging layers were combined with poly(methyl methacrylate) (PMMA) layers and polystyrene (PS) layers to form charge traps with various depth. Based on the PS/SLG/PMMA/SLG/PMMA multi-stacking layer, the devices exhibited efficient tristable memory performances. The ratios as large as 10(4) between different resistive states were maintained for a retention time of more than 10(4) s. The operation mechanisms of stepping-charging in the multi-stacking layer for the tristable resistive switching were proposed on the basis of the current-voltage analysis. (C) 2014 AIP Publishing LLC.

引用

页数：5

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