Growth and band gap of the filled tetrahedral semiconductor LiMgN

被引:60
作者
Kuriyama, K [1 ]
Nagasawa, K [1 ]
Kushida, K [1 ]
机构
[1] Hosei Univ, Ctr Ion Beam Technol, Coll Engn & Res, Koganei, Tokyo 1848584, Japan
关键词
lithium compounds; nitrides; semiconducting tertiary compounds;
D O I
10.1016/S0022-0248(01)02249-7
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
The cubic AIN-like compound, LiMgN, can be considered as a zinc blende-like (MgN)(-) lattice partially filled with He-like Li+ interstitials. LiMgN was synthesized by direct reaction between N-2 and LiMg alloy at around 800degreesC for 8 h. Polycrystalline crystals are grown as cornflake-like shapes with a light yellow color and show the LiMgN-phase (the lattice constant a = 4.955+/-0.005 Angstrom) except for non-reactant LiMg and oxide (LiNO3). The ordered structure between Li and Mg is not confirmed exactly by X-ray diffraction studies. The band gap of as-grown crystals evaluated using photoacoustic spectroscopy is 3.2 eV, which value is supported by an optical transmission spectrum. The band gap value of LiMgN is close to that of GaN (zinc blende, E-g = 3.45 eV). (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:2019 / 2022
页数:4
相关论文
共 15 条
[1]   OPTICAL AND MORPHOLOGICAL PROPERTIES OF LIGHT-EMITTING POROUS SILICON PREPARED BY CHEMICAL DISSOLUTION OF SILICON-WAFERS [J].
AMATO, G .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1995, 34 (4A) :1716-1722
[2]   ELECTRONIC-STRUCTURE OF LIZNN - INTERSTITIAL INSERTION RULE [J].
CARLSSON, AE ;
ZUNGER, A ;
WOOD, DM .
PHYSICAL REVIEW B, 1985, 32 (02) :1386-1389
[3]   ON THE UNRELIABILITY OF THE RELIABILITY INDEX [J].
DONOHUE, J ;
TRUEBLOOD, KN .
ACTA CRYSTALLOGRAPHICA, 1956, 9 (06) :615-615
[4]   TERNARY NITRIDES PHOSPHIDES AND ARSENIDES OF LITHIUM [J].
JUZA, R ;
LANGER, K ;
VONBENDA, K .
ANGEWANDTE CHEMIE-INTERNATIONAL EDITION, 1968, 7 (05) :360-&
[5]   Optical band gap of the ordered filled-tetrahedral semiconductor LiMgP [J].
Kuriyama, K ;
Kushida, T ;
Taguchi, R .
SOLID STATE COMMUNICATIONS, 1998, 108 (07) :429-432
[6]   Optical band gap of the filled tetrahedral semiconductor LiMgAs [J].
Kuriyama, K ;
Kushida, K .
JOURNAL OF APPLIED PHYSICS, 2000, 87 (06) :3168-3170
[7]   BRIDGMAN GROWTH OF LITHIUM INDIUM ALLOY SINGLE-CRYSTALS [J].
KURIYAMA, K .
JOURNAL OF CRYSTAL GROWTH, 1974, 23 (02) :160-162
[8]   Growth and band gap of the filled tetrahedral semiconductor LiZnN [J].
Kuriyama, K ;
Taguchi, R ;
Kushida, K ;
Ushiyama, K .
JOURNAL OF CRYSTAL GROWTH, 1999, 198 :802-805
[9]   LOCAL LATTICE DISTORTION RELATING TO PHOSPHORUS ANTISITE DEFECT IN PHOSPHORUS-ION-IMPLANTED GAP LAYER [J].
KURIYAMA, K ;
KATO, T ;
TAJIMA, S ;
KATO, T ;
TAKEDA, S .
APPLIED PHYSICS LETTERS, 1995, 66 (22) :2995-2997
[10]   OPTICAL BAND-GAP OF THE FILLED TETRAHEDRAL SEMICONDUCTOR LIZNN [J].
KURIYAMA, K ;
KATO, T ;
TANAKA, T .
PHYSICAL REVIEW B, 1994, 49 (07) :4511-4513